Long-Term Large-Signal RF Reliability Characterization of SiGe HBTs Using a Passive Impedance Tuner System

This paper contributes to the exploration of dynamic operating limits of
$\mathbf{SiGe}$
HBTs. The bipolar transistor breakdown voltages
$BV_{\text{CBO}}$
and
$BV_{\text{CEO}}$
are experimentally determined and discussed. DC, small-signal and large-signal simulations are performed, demonstrating the HICUM/L2 model and extracted model parameters to be in good agreement with measurements far beyond
$BV_{\text{CEO}}$
. A long-term RF stress test is performed, proving SiGe HBTs to be extremely robust and reliably operable far beyond
$BV_{\text{CEO}}$
within the investigated stress test duration. Only extremely nonlinear large-signal RF operating conditions cause a degradation of RF parameters.