Advanced 200-mm RF SOI Technology exhibiting $78\ \text{fs}\ \mathrm{R}_{\text{ON}}\times \mathrm{C}_{\text{OFF}}$ and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM

RF Front End Modules (FEMs) are currently achieved using a variety of technologies. However, since integration drives wireless business in order to achieve the appropriate cost and form factor, CMOS Silicon-on-insulator (SOI) has been adopted 10 years ago and is now the dominant technology for RF switches in RF FEMs for cell phones and WiFi [1]. While current performances available on RF SOI technology have been exceeding what was feasible using GaAs one, new cellular system requirements ask even more stringent performances and consequently RF SOI technology must continue to improve. In this paper, we review and discuss the optimization of an advanced 200 mm RF SOI technology achieving
$R_{\text{ON}}\times C_{\text{OFF}}$
of 78 fs with a breakdown voltage of 3.7 V.