Total Ionizing Dose Hardness Enhancement at Room Temperature in CMOS 0.25µm Technology

This work presents electricals characteristics of primary and secondly irradiated MOSFET transistors. Secondly irradiated transistors after nominal operation recovery showed a great TID resistance betterment. This improvement is allowed by latent interface traps charge build-up during long time annealing. Latent interface traps effects on electrical degradation at STI level are physically explained with simulation and experiment comparison.