An Achievement of Low Resistance Non-Salicide CT on Active Area

Metal ions' contamination could degenerate the detection accuracy and increase the noise of Si-based photoelectric devices. Non-salicide contact technique has been developing to avoid metal ions' contamination during manufacturing process as much as possible. In this paper, several adjustments of process have been attempted to reduce the contact resistance between CT and Si without salicide loop. By using of proper process conditions including IMP, glue layer, and thermal, the contact resistance has been reduced from 916.6 ohms/CT to 85.5 ohms/CT, which shows significance for Si-based photoelectric and relevant whole circuits to reach a good performance.