Evaluation of the Reliability of a X-band Low-Noise Amplifier at Different Ambient Temperatures

This article is devoted to determining the reliability of a microwave microelectronic especially low noise amplifier device by determining the thermal resistance and temperature of the transistor channel. The main parameter to determining reliability is Mean-Time-to-Failure. This paper has two methods for determining the channel temperature. Methods for calculating the thermal resistance and channel temperature are based on calculations of the main parameters of the heat-conducting substrate and have assumptions for obtaining boundary conditions. And also, work was carried out to estimate the channel temperature at different frequencies of the carrier signal, as an argument of the output power, as well as when modeling under various conditions of temperature exposure. The low noise amplifier has been designed to operate in the X frequency band from 8 to 12 GHz. The main parameters of the developed amplifier were modeled using models of field-effect transistors based on 0.25 gm, GaN, HEMT technologies.