Simulation and Comparison of Electrical Performance of Molybdenum Disulfide and Poly (3-Octylthiophene) Self-assembled Monolayer based Nano MOS Device

To simulate and compare the capacitance- voltage characteristics of MOS configuration based on poly (3-octylthiophene) self-assembled to a molybdenum disulfide monolayer. Materials and methods: The tool used to design was multi dielectric energy band used to design and simulate the Au/POT/SiO2/Si and Au/MoS2/SiO2/Si devices. Each group has a sample size of 20, the total samples for two groups are 40. The stack capacitances, gate charges were measured, tabulated and plotted for the voltages ranging from -5Vto+5V. Results : The stack capacitances of both devices were analyzed by using energy band diagram software. Stack capacitance obtained from simulation results for POT and MoS2 based MOS devices has a significant accuracy ratio (p < 0.05). In the C mean stack Au/POT/SiO2/Si based MOS structure performs significantly better with 1.50E-7 farad than the Au/MoS2/SiO2/Si 1.46E-7 farad. Conclusion: Au/POT/SiO2/Si based self-assembled monolayer structure shows significantly higher performance than Au/MoS2/SiO2/Si based self-assembled monolayer.