A Comprehensive Analysis on the Performance of SiC and GaN Devices

Recent developments are focusing more on advancement of Power semiconductor devices used in converters that uses Silicon (Si) materials. These Si materials have approached to their theoretical limits in terms of reliability, efficiency and voltage blocking capability that Si-based material cannot handle. To overcome this limitation, new semiconductor materials are employed to make the power electronics system more robust. Improved Semiconductor materials are considered as Wide Band-gap Semiconductors that includes silicon carbide (SiC) and gallium nitride (GaN) novel semiconductor material that replaced Si devices. This paper represents a comprehensive study of SiC and GaN devices based on different characteristics and its future trends.