Performance Analysis of RRAM Based Low Power NVSRAM Cell Designs for IoT Applications

The critical challenge facing engineers working on artificial intelligence today is overcoming the memory and power bottlenecks inherent in the present architecture to provide faster data access at a reduced energy cost. Non-Volatile SRAM (NVSRAM) based on embedded technology should provide fast access and energy savings. The Resistive Random Access Memory (RRAM) based NVSRAM technology will protect data in a power breakdown and secure data recall without consuming any power. Additionally, it incorporates the benefits of standard SRAM, such as high write speed, limitless cycles, energy efficiency, non-destructive data read, wear resistance, and a simple access protocol. RRAMs also called memristors have various benefits over other types of Non-Volatile Memories (NVMs), including compact device size, low voltage operation, fast speed, and CMOS compatibility. This study looks RRAM-based NVSRAM cells like the 7T1R, 7T2R, and 8T2R which bring non-volatility to SRAM cells. When compared to a standard 6T SRAM cell, simulation at the cell level demonstrates improved performance with better Read and Write operations at a compatible latency, improved noise margin, and reduced power. The simulation results show that the RRAM-based NVSRAM cell protects the data when power is turned OFF and retains the data when power is turned ON again, shows better stability, and has excellent switching performance during power on/off speed.