Understanding the Mechanism of Some Important Heterostructures for Optoelectronic Application

This paper reflects a complete mechanism for the optoelectronic application. A W-Design type-II (Broken Gap) quantum well lasing AlSb/InAs/GaAsSb nanoscale heterostructure. The proposed structure can be benefited to MIR region for high intensity source. The combination is done via the usage of 6×6 band k.p. Hamiltonian. The structure computes wavefunctions of carriers, matrix dipole, sub-band systems and factors chargeable for the probabilistic transactions that ends up into the excessive optical gain. The Design structure type-II AlSb/InAs/GaAsSb heterostructures will be helpful for inside the surroundings monitoring conditions, crucial for detecting the Carbon dioxide (CO2), Carbon monoxide (CO) and Nitric oxide (NO), poisonous gaseous compounds to be had with inside the dirty environmental surrounding. Moreover, the designed type-II heterostructures can also utilized in telecommunications and spectroscopy functions that require ~5200 nm wavelength.