1550-nm waveband VCSELs made by wafer-fusion technique

1550-nm VCSELs with an active region of ten compressive-strained InGaAs QW, separated by the InP lattice-matched InAlGaAs barrier layers and GaAs/AlGaAs distributed Bragg reflectors are fabricated using wafer-fusion and molecular-beam epitaxy methods. Single-mode operation at output optical power of 4.8 mW, stationary and dynamic characteristics are demonstrated.