In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band

We report about an In
0.53
Ga
0.47
As/AlAs doublebarrier resonant tunnelling diode (RTD) epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100−300 GHz). The heterostructure was designed using a TCAD-based quantum transport simulator and experimentally investigated through the fabrication and characterisation of RTD devices. The high-frequency RF power performance of the epitaxial structure was analysed based on the extracted small-signal equivalent circuit parameters. Our analysis shows that a 9 µm
²
, 16 µm
²
, and 25 µm
²
large RTD device can be expected to deliver around 2 mW, 4 mW, and 6 mW of RF power at 300 GHz.