Design of PERC Cell using SiO2, Si3N4, and Al2O3 with the Novel technique for enhanced absorption of silicon selective emitter for solar cell processing

In this research work, the high efficiency "Passivated Emitter Rear Cell (PERC)" solar cell design was performed which acquires severe impact on bulk lifetime, the incident angle of the solar radiation, and temperature dependence on electrical properties of measured PERC device. In this research work, the major intention is to fabricate the PERC solar cell by doping various chemicals around the surface such as SiO
2
, Si
3
N
4
and Al
2
O
3
. The simulation is performed in ATLAS Silvaco simulator. The overall simulation will be executed by the two-step process such as creation of design structure and then numerical simulation. The placing of the structured doped solar cells on a specific angle of inclination is examined. The performance metrics of the proposed solar cell will be evaluated by analysing the bulk thickness with respect to the angle of inclination. The other aspects which could measure the efficiency of the proposed design is the short circuit current, open-circuit voltage, maximum power, fill factor and efficiency of designed PERC solar cell. The supreme fill factor and efficiency attained is 80.71% and 23.8219%.