Numerical analysis on H2 plasma assisted growth of graphitic leaves on carbon nanotube

Numerical conceptual design explaining the growth of graphitic leaves over carbon nanotube (CNT) in Hydrogen (H
2
) plasma environment employing Plasma Enhanced Chemical Vapor Deposition (PECVD) technique is evolved. Growth of linear defect density (investigated via energy balance equation over CNT), CNT, graphitic leaves is explored by varying input plasma power (600-1200W). The results indicate drop in defect density, growth rate of CNT and graphitic leaves with rising plasma power. Obtained theoretical outcomes conform to the experimental studies.