Impact of PECVD characteristics on metrics of a Plasma-Assisted Vertically Aligned Carbon Nanotube FET (VA-CNTFET) device

This research aims to navigate discussion away from a Silicon based FET device by focusing on a relatively new design material - Carbon Nanotube as channel material. To do the same, a simulation analysis of the device Vertically Aligned Carbon Nanotube FET (VA-CNTFET) is done and investigated. The CNTs are vertically aligned owing to PECVD synthesis technique where a vertically aligned semiconducting CNT is incorporated as the channel. This investigation further draws a relation between the PECVD parameters and the metrics of the proposed device.