Simulation and Comparison of AlGaN LEDs with Boron Doped GaN Well Using Assorted Aluminium Concentration

The influence of aluminium concentration on the optical devices of Gallium Nitride Light Emitting Diodes is examined to improve the optical performance of the Light Emitting Diodes. The investigations are done using physical simulator, Technology Computer-Aided Design (TCAD). Boron doped Gallium Nitride Light Emitting Diodes with four quantum Wells are considered. Radiative recombination, Auger recombination and Polarization models are utilized in simulations. The influence of the assorted aluminum concentration (0.2 and 0.3) in AlGaN/GaN and AlGaN/BGaN Light Emitting Diodes optical performance is presented. The boron concentration of proposed LED is considered as 10%. The analysis on device temperature, radiative recombination rate, luminous power and wavelength with respect to power spectral density are performed to obtain the efficient Light Emitting Diode. The TCAD simulation observations represents that the luminous power and radiative rate of Gallium Nitride Light Emitting Diodes with aluminium mole fraction of 0.2 shows better improvement when compared to 0.3 mole fraction of aluminium.