A High Responsivity Plasmonic Internal Photoemission Detector for Optical Communication

In this paper a novel Silicon Schottky photodetector enhanced by localized surface plasmon excitation for C-band communication was designed and numerically investigated. The photodetection mechanism is based on the internal photoemission of the hot electrons in the 2 nm-thick of Schottky metal consisting of a two-dimensional square array of holes. The polarization-insensitive absorptance in this photodetector with Au Schottky metal dramatically enhances to 95.1% at the wavelength of 1.55 $\mu$m. Moreover, at a reverse bias voltage of 1 V, we achieve a high responsivity of 0.32 A/W and the dark current of 665 nA at room temperature.