Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology

Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E- Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.