Research of In-situ Type Resistive Sensor for High Power Microwave Pulse Measurement

The High Power Microwave (HPM) pulse power was characterized according to the relative change rate of Resistive Sensor (RS) chip resistance, which caused by the hot carriers effect under the HPM pulse. The RS based on the n-Si chip fixed in double-ridged waveguide was studied. The RS basic parameters were introduced, and the multi-layer structure model of RS chip was studied. Finally, the experiment system of RS was established, and the experimental calibration was carried out under the HPM pulse excitation. The experimental results show that the developed in-situ type RS can withstand 130 kW pulse power in the range of 5-11 GHz, which can provide potential applications for HPM early warning.