Phase-change memory cells characterization in an analog in-memory computing perspective

Power consumption related to data transfers between processing and memory units has become a critical issue in the recent data-centric outlook of integrated circuits. In the context of In-memory Computing (IMC), where data conveyance is narrowed performing computations directly within the memory unit, Phase-change Memory (PCM) technology has become an attractive candidate due to its intrinsic multilevel storage capability. The test vehicle of this work is an embedded PCM (ePCM) provided by STMicroelectronics and designed in 90-nm smart power BCD technology with a Ge-rich Ge-Sb-Te (GST) alloy for automotive applications. In this framework, a preliminary characterization of PCM cells has been carried out, aimed at evaluating their performance as enabling devices for analog in-memory computing (AIMC) applications.