I. Introduction
With the rise of electrified transportation, the need for power-dense and power-efficient electronic sub-systems is increasing. These sub-systems are responsible to carry and modulate high-currents, in the order of hundreds of amperes. A few examples of such systems are Avionics, Hotel electric power (HEP), auxiliary power in a Battery Electric Vehicles (BEV), fast-charging. An application of a 28-V/714-A DC-DC converter for the Low Voltage Electrical Distribution System in More Electric Aircrafts (MEAs) is cited in [1]. An application of a 12-V/200-A DC-DC converter for bidirectional charging in automotive applications is referred in [2]. Tesla Model 3’s Supercharging application of 400-V/661-A has been cited in [3]. The management of these high current levels usually requires paralleling of discrete switches [4], since the current levels are beyond the current-carrying capability of a single-die switch [5]. Multi-module approach is followed in high density designs, where the MOSFET paralleling limits are reached [6]. Unequal current sharing in parallel-connected MOSFETs leads to an unexpected power loss profile, breach of Safe Operating Area (SOA), unequal thermal distribution and lower reliability. The static current imbalance in parallel connected MOSFETs is self-limited by the positive temperature coefficient (PTC) of RDS(on) [7]. The dynamic current imbalance is primarily a function of the MOSFET array’s network inductance and variation in VGS(th) [7]. Under a production environment, the variation in VGS(th) can be managed by procuring matched MOSFETs from the manufacturer [8].