High-performance Reverse Blocking p-GaN HEMTs with Multi-column p-GaN/Schottky Alternate-island Drain

In this paper, the novel normally-off reverse blocking p-type GaN (p-GaN) high electron mobility transistors with multi-column p-GaN/Schottky alternate-island drain (MPS-HEMTs) have been proposed and experimentally demonstrated. The fabricated MPS-HEMTs have a reverse blocking voltage BV
R
of -1092 V for L
GD
of 22 μm, low on-set voltage V
ON
of 0.31 V, and low specific on-resistance R
ON,SP
of 8.3 mΩ•cm
²
at gate source bias of 8 V. The high-performance MPS-HEMTs have shown a much-improved trade-off among V
ON
, BV
R
, and R
ON.SP
, which indicates the proposed multi-column p-GaN/Schottky alternate-island drain structure to be promising in p-GaN power device platforms.