First Integration of 10-V CMOS Logic Circuit, 20-V Gate Driver, and 600-V VDMOSFET on a 4H-SiC Single Chip

In this work, we reported the integration of 10-V CMOS logic circuit, 20-V gate driver, and 600-V VDMOSFET on a 4H-SiC single chip for full SiC smart power ICs. This integration process features PMOSFET isolation (P-iso) from the high voltage substrate, local oxidation of SiC isolation between devices, dual gate oxide thickness, and P
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poly-Si gate. It is demonstrated that the blocking capability of the P-iso structure can exceed 700 V and the switch of the VDMOSFET can be controlled by a 10-V signal through a 10-V to 20-V level shifter and a 20-V gate driver.