Development of a-Ga2O3 Power Devices

Corundum-structured Ga2O3 (a-Ga2O3) is attracting attention as a new candidate for next-generation power device material due to its excellent physical properties (bandgap: 5.3eV). We have successfully demonstrated thin-film SBDs with extremely low specific on-resistance of 0.1mΩ-cm2 (breakdown voltage: 531V) using MIST EPITAXY® technology. A 600V-class SBD packaged in TO-220 has also been developed and is approaching practical use. We also demonstrated a normally-off, high channel mobility a-Ga2O3 MOSFET.