Resistive Switching Device Based on Core-shell Ag@SiO2 Nanowire Networks

Resistive Switching (RS) devices based on core-shell-nanowire networks are promising candidates for future low-cost memory applications. In this work, an Ag@SiO
2
core−shell structure was successfully prepared to realize a RS device. The Ag nanowires (NWs) were synthesized by polyol process and Ag@SiO
2
core-shell NWs were then formed by the hydrolysis and polymerization of tetraethyl orthosilicate (TEOS). The microstructure was observed with transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and the ultraviolet-visible (UV-vis) absorption spectra was determined by UV-vis spectrometer. Resistive devices were fabricated by drop coating the NWs solution on the substrate. The electrical properties of the devices are characterized. The result displays that it has volatile threshold resistance switching characteristics, and an on/off ratio of ∼10
⁴
was achieved. By changing the device fabrication method, the conclusion that devices with high area density NWs have lower threshold voltages is demonstrated. This result is instructive for the application of this RS device in low power consumption memory.