Double-sided Emission of Inverted Quantum-dot Light Emitting Diode by Using Gold Nanowires (AuNW)

Research towards Quantum Dots (QDs) derived from CdSe/ZnS has attracted worldwide attention because of its exceptional optoelectronic properties and use in quantum dots-based light emitting diodes. Usually, a highly conductive electron-transport layer along with hole-transporting layers (HTLs) having low-mobility, and a vacuum-deposited opaque metal electrode are used in the inverted CdSe/ZnS-based QLED. Because of this structure, unbalanced charge injection into the emissive layer occurs, affecting the device's output luminance and stability. Additionally, the fabrication process is more challenging, costly, and time-consuming when using the vacuum-deposition approach. In order to address all of these issues, we used a non-vacuum technique for fabricating an all-solution processable double-sided emitting inverted QLED with a cascade structure and a transparent gold nanowire (AuNW) electrode to obtain emission at the top-side. According to the results, the fabricated QLED had a low turn-on voltage of 2.2 V, luminance of 3905 cd m
^-2
, high current efficiency of 5.9 cd A
^-1
and a 3.4 % external quantum efficiency. Double-sided QLED devices with AuNW electrode might lead to new lighting and display technologies, according to the findings of this study.