Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells

Comparative modeling of induced charge in FinFET and MOSFET structures is performed. A comparative analysis of the influence of various mechanisms on the occurrence of a current pulse after a particle strike is carried out. The SEE sensitivity of the MOSFET and FinFET based 6T SRAM cells were modeled using TCAD-SPICE mode simulation.