Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration

Two-dimensional (2D) materials are promising for next-generation energy-efficient nanoelectronics. In this work, we exploited sub-1-nm 2D monolayers ranging from semimetal to semiconductor and insulator to decorate metal-semiconductor (MS) interfaces and achieved an outstanding capacity of manipulating carrier injections through the 2D monolayers. A record-high rectification ratio (5.4×10
⁴
) and conductance (2×10
⁵
S/m
²
) were obtained from a Ti/MoS
2
/p-Si/Al Schottky diode, which demonstrates the promising potential of the sub-1-nm 2D monolayers to boost the performance of various electron devices.