Design and Simulation of 32 nm CNFET Digitally Programmable Current Conveyor

This paper presents design and simulation study of complementary metal oxide semiconductor (CMOS) and carbon nanotube field effect transistor (CNFET) based digitally programmable second generation current conveyor (DPCCII). A detailed comparative study of CMOS and CNFET based DPCCII (CMOS-DPCCII) and (CN-DPCCII) for various performance computing parameters like voltage and current gain, current and voltage bandwidth, terminal X and Y resistances and total harmonic distortion (THD) has been done. Simulated results show that the current and voltage bandwidth of CN-DPCCII has increased by 10
³
orders in comparison to CMOS-DPCCII. In order to verify the functionality of proposed DPCCII all the simulation has been carried out using HSPICE at 32 nm technology node at supply voltage ±0.75V.