I. Introduction
RF power dividers are widely preferred in microwave circuits to direct the power to a number of loads [1]. They are most commonly used in the input and output stages of amplifiers, antenna feed networks, and modulators. Performance of the dividers is characterized by the isolation between the output ports, input and output port matchings, operational bandwidth, and the insertion loss within the band. Wilkinson power divider and Gysel power divider are two widely preferred topologies since they are easy to fabricate in monolithic microwave integrated circuits (MMIC) processes. However, because of the λ/4 arm lengths, they occupy a large area that increases the chip cost. The second issue regarding the power dividers is that their performance highly depends on the resistor value between the isolated ports. Therefore, ensuring stable performance against changes in the resistor value caused by temperature and process variations is crucial. Also, parasitic effects of the resistors become dominant at high frequencies and must be taken into account. To prevent large investments in the process optimization [2] that certainly takes a long period, such non-ideal effects must be considered at the design stage.