Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22nm FDSOI Technology

Strained-SiGe channel structures have been widely exploited in advanced nanoscale CMOS technology nodes to enhance the performance of p-FETs, especially in the high frequency domain. By relaxing the contacted poly pitch (CPP) to gain beneficial strain effect, a previous study has reported a significant improvement in the transconductance, and thus, the device’s speed is increased for radio frequency (RF) operation. This paper accordingly presents a comprehensive analysis of the effect of the gate CPP on the RF performance of the 22nm FDSOI p-FETs. The scope of the study includes the small-signal characteristics, the W-band noise performance and the large-signal performance in non-50-Ohm environment.