Probabilistic Poly Harmonic Distortion Model

This paper presents a probabilistic, nonlinear, frequency-domain behavioural model for RF transistor devices. The model is built on the poly harmonic distortion (PHD) framework, although the method itself is general and can be applied to many other modelling procedures. The key difference between this and existing models lies in the probabilistic prediction; rather than provide a single predictive output, the output of the proposed model is a probability distribution, with corresponding mean and variance distribution parameters that depend on the input independent variable. The model is first validated using simulated data to demonstrate the key theoretical principles. The model is then extracted from real-world experimentally measured load pull waveform data.