Optimized Harmonic Tuned High Efficiency L-Band Power Amplifier

In this paper, the design of broadband and high-efficiency Class-AB GaN HEMT RF power amplifier (PA) is introduced. We started by the investigation of the impact of the 2
^nd
, and 3
^rd
harmonics load variation on the power added efficiency (PAE) level. The proposed design is developed based on the selection of the optimum 3
^rd
harmonic load values that result in achieving the required PAE level and high gain values. The aim of selecting the 3
^rd
harmonic load matching instead of the conventional harmonic tuning method is to simplify the output matching circuit and to be easier to implement over a wider frequency range. The proposed PA design achieves a measured 40% bandwidth from 1 to 1.5 GHz while exhibiting a power gain of 14 dB, 60-63% PAE, and 44.8 dBm output power. Good agreement between simulation and measurement has been achieved due to the use of high order harmonic balance simulator and high accuracy implementation procedure.