Effect of Substrate Temperature on Resistive Switching Characteristics of HfOx based Flexible ReRAM Devices

The HfO
x
based resistive memory devices have been fabricated on Indium tin oxide (ITO) coated Polyethylene terephthalate (PET) flexible substrate at room temperature. X-ray photoelectron spectroscopy (XPS) has been used to confirm the chemical composition of
$HfO_{x}$
. All the devices show forming free bipolar resistive switching behavior with high resistance state (HRS) and low resistance state (LRS). The switching characteristics with substrate temperature variation have been studied. There is an adequate memory ratio (∼10) till ∼10
⁴
s at elevated temperature (100°C). The details of the conduction mechanism in elevated temperature have been discussed, which clearly suggests the space charge limited conduction (SCLC) in HRS and LRS follow the Ohmic (hopping) behavior. The mechanical bending test shows faithful degradation of memory window of the device ranging from 20 to 5 mm bending radii.