A Monolithic 200V GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters Achieving 98.3% Peak Efficiency

A monolithic Gallium-Nitride (GaN) Half Bridge with integrated gate drivers, floating supplies, level-shifters and a dead time control is presented. The design has been realized in a 200V Gallium-Nitride on Silicon-on-Isolator (GaN-on-SOI) technology with Deep Trench Isolation (DTI), using enhancement type high voltage and low voltage GaN devices. The power stage and analog/digital functionality are integrated on a single die. The resulting power module has been tested up to 10A loading and 5MHz switching frequency, achieving a peak power stage efficiency of 98.3%. The integrated gate drivers provide a delay matching within 2ns. This work successfully demonstrates the capabilities of GaN integrated circuits (IC) in power management applications. Moreover, it clears the path towards fully replacing pure Silicon (Si) or Si-GaN hybrid DC-DC converter modules with fully integrated monolithic GaN counterparts.