Spurious Miller turn-on evaluation for SiC MOSFET devices in high-frequency converters

The aim of this paper is to analyze the cross-conduction that happens during the switching operation of a standard two-level half-bridge power converter leg, also known as “Miller turn-on”. In this type of converter when one device turns on, the complementary one is usually kept in off state applying negative gate-source voltage, but it can be suddenly triggered on due to induced voltage spike at the gate-source terminals, thus the device channel can be slightly activated conducting a certain amount of current. Consequently, considering that reverse recovery charge (Q
rr
) and energy (Erec) can be altered, this paper will present how “Miller turn-on” can be modulated by applying different gate-source off voltage values which are correlated to the threshold voltage (Vth) of the SiC MOSFET devices that compose the converter.