Radiated Noise Direct Quantification on SiC MOSFET Half-Bridge using Extended Double Pulse Test

Improving power device characteristics is essential for advancing power electronics technology. The use of WBG devices has increased in the past decade because application of low-loss devices is vital for effective use of energy resources. The use of WBG devices means faster switching operations which often increases radiated noise, but it is still necessary to comply with EMI standards of the end product. Therefore, power electronics products must be optimized while also considering noise. For efficient design, it is desirable to quantify the level of radiated noise generation at the earliest possible stage. But, noise is often only estimated from the voltage and current waveforms obtained by double pulse testing. Hence, this article proposes the idea of an extended double pulse test that enables the current dependency of radiated noise to be included in the conventional switching characteristics of a SiC MOSFET half-bridge. This idea will contribute to rapid prototyping of power devices and equipment by performing a double pulse test in an anechoic chamber to grasp the timing of radiated noise generation and quantify the magnitude.