A 12nm CMOS Technology on High Performance Multi-Workfunction Transistors

We present here a state-of-art 12nm FinFET technology with multi-workfunction gate stack for device improvement over single gate stack. The improved devices achieved +18% AC performance based on +24%/+12% NFET/PFET DC performance gain, as well as +24% SRAM FET performance improvement. Better devices are from mobility gain in un-doped fins versus single workfunction where fin doping was utilized to create Vt differentiation. Meanwhile, multi-workfunction process releases fin structure which has improved device mismatch. -27%/-30% Vt mismatch reduction is demonstrated in logic/SRAM FETs. All results indicate a highly manufacturable and reliable 12nm FinFET technology with multi-workfucntion gate stack for high performed CMOS demonstration.