BEOL-Compatible, ALD-grown In2O3 Top-Gate FETs with Maximum Drain Current of 3 A/mm through Thermal Engineering and Pulse Measurement

This paper reports 1 A/mm drain current (I
D
) and 0.24 Ω•mm contact resistance (R
C
) at on-state with BEOL-compatible, top-gated, and ALD-grown 1.3-nm In
2
O
3
. Nonetheless, the devices suffer severely from self-heating effect (SHE) as larger bias is applied. Accordingly, beside quantitatively investigating the SHE in this system, thermal engineering is utilized to greatly alleviate it and therefore achieve higher I
D
of 2 A/mm by employing highly resistive silicon as the substrate. Moreover, pulse measurements further reduce SHE and attain even higher I
D
of 3 A/mm due to the lowered power rate of the devices.