Breakdown-Voltage Enhancing in LDMOS by Introducing Buffered Step Doping Technique

An In
0.53
Ga
0.47
As-based LDMOS with buffered step doping (BSD) is proposed, and its characteristics are investigated using the Sentaurus TCAD simulator. The peak of the electric field is curbed by introducing the BSD doping in the substrate region. Thereby, the breakdown voltage (BV) of In
0.53
Ga
0.47
As-based BSD LDMOS is amplified notably. The simulation outcome reflects that the BV of BSD LDMOS is increased by 7.1% compared to the LDMOS. However, the drain current of BSD LDMOS achieved its saturation value much faster than the LDMOS. Moreover, the breakdown voltage (BV) and saturation current have been enhanced by arranging the BSD doping length and depth (LB and TB). Therefore, we found the BSD LDMOS has a much better performance.