Middle-of-the-Line Reliability Characterization of Recessed-Diffusion-Contact Adopted sub-5nm Logic Technology

In this paper, we report middle-of-the-line (MOL) reliability characterization of recessed-diffusion-contacts adopted sub-5nm logic technology. The intrinsic MOL reliability including voltage-ramp-to-breakdown (Vramp) and time-dependent-dielectric-breakdown (TDDB) shows a notable improvement. MOL breakdown voltage (Vbd) is also comparable when a gate contact is placed next to a recessed-diffusion-contact. MOL Vramp related process parameters, such as critical dimension and height, are explained. MOL Vbd as an early diagnosis tool for process maturity, such as contact misalignment and dynamic voltage screening (DVS), on sub-5nm logic technology is addressed.