NanoBridge Technology for Novoaltile FPGA and Memory Applications : (Invited)

A recent progress of NanoBridge (NB) technology is reviewed in terms of nonvolatile field-programmable gate array (FPGA) and memory (NVM) applications. The NB is a kind type of electrochemical resistive-change device using migration of Cu, in which a thickness of Cu bridge can be controlled by a programming current and an appropriate ON-conductance is programmed for depending on the applications. For a routing switch in the FPGA, two NBs are connected in series and each conductance is tuned to 0.8mS to transfer signals, in which the NBFPGA realizes 78% area and 80% power reductions compared with a conventional SRAM-FPGA. For the NVM application, that is tuned to 0.2mS, which has 150
^o
C 20years retention with 30% degradation of the conductance, which is potentially applicable for automobile/AIoT applications.