High power module GaN with integrated current sensor for fast short circuit protection

In this paper, analysis and optimization of high current Gallium nitride (GaN) based power module (650V/300A) are discussed. This power module requires an advanced packaging structure with optimized parasitic parameters in fast switching power converters. The hybrid combination of printed circuit board (PCB) and ceramic substrate can provide high electrical performances in terms of vertical commutation loop, which helps to limit the stray inductance substantially. A global optimization is done to achieve 0.86nH power loop inductance and 0.46°C/W thermal resistance. Moreover, this paper proposes also an ultra-fast short circuit protection method based on an integrated sensor in the power module to measure the changing magnetic field during a short circuit event. The proposed short circuit method shows excellent protection performance with a detection time less than 100ns, which is a promising solution against the short circuit event in a half bridge configuration.