Analysis of the Endurance of CMOS IC Elements to Failures after Charged Particle Strike

The article presents a method for determining the boundary conditions of a Single Event Transient (SET) in a particular MOS transistor, depending on the distance to the point of a charged particle strike. The simulation in cylindrical coordinates of the process of charge generation and collection by the MOS structure after a charged particle strike was carried out and a technique was developed for recalculating the results to a real MOS structure. The obtained results are convenient for practical use and make it possible to reasonably apply special radiation-hardening methods to protect 90 nm CMOS IC from failures caused by a charged particle.