Junctionless Field Effect Transistor with Undoped and Doped profile- A Comparative Study

In this work, we report a comparative study of the Double Gate Field Effect Junctionless Transistor (DG-JLFET) with undoped (lightly doped) and doped structure. Different electrical performance of undoped and doped Junctionless Transistors has been studied by using TCAD device simulator. Undoped JLFET uses a doping profile of 10
¹⁰
cm
⁻³
and for doped JLFET doping profile is considered as 10
¹⁹
cm
⁻³
. The simulation study shows that the undoped JLFET device has lower transconductance, lower DIBL, better subthreshold characteristics and a lower Ion/Ioff ratio compared to a doped structure.