Numerical simulation of the NiO as hole transport layer in CH3NH3PbBr3 perovskite based-solar cell using SCAPS-1D

With the SCAPS-1D simulator, a full digital simulation and modeling on the perovskite solar cell was performed using the perovskite methylammonium lead tribromide material MAPbBr
3
for various parameters such as open circuit voltage (V
oc
), fill factor (FF), power conversion efficiency (PCE) and short-circuit current density (J
sc
). The electronic properties of the MAPbBr
3
material used as the active layer were calculated. The effects of NiO layer concentration, MAPbBr
3
layer thickness and temperature on photovoltaic parameters on perovskite solar cell (n-ITO/ n-PCBM (ETL)/ p-MAPbBr
3
/p-NiO (HTL)) were examined. The simulation of the solar cell based on perovskite MAPbBr
3
allowed us to find the following values
$(\mathrm{V}_{\text{oc}}=1.0476\ \mathrm{V},\ \mathrm{J}_{\text{sc}}=7.9745\ \text{mA}/\text{cm}^{2},\ \text{FF}= 77.85\%,\ \text{PCE}=6.5\%$
). Our results were compared with published experimental values and also simulated by SCAPS-1D, and they showed good agreement.