Investigation of the Crystallization Kinetics of the Thin Films for the Phase Change Memory Application

The purpose of this paper is to investigate thermal properties and crystallization kinetics of the Ge
2S
b2Te
5
thin films for the phase change memory application. In this regard, the method of differential scanning calorimetry was used. Kinetic parameters were determined by the methodology that was developed earlier. This methodology is based on the combined use of model-free and model-fitting methods. It was found that the effective activation energy at the beginning of crystallization was about 1.8 eV and slightly decreased to about 1.6 eV. The second-order reaction model describes the crystallization process well. The values of the frequency factor depending on the conversion were also found. Obtained results correlate with the model, according to which crystallization takes place in two stages: nucleation and growth of nuclei. In conclusion, it can be said that the materials of the Ge-Sb- Te system (Ge
2
Sb
2
Te
5
in particular) are perspective for application in phase change memory.