Physics-based Compact Modeling of Statistical Flicker Noise in FinFET Technology

In this paper, a new compact model of flicker noise statistics for FinFET technology is proposed, based on inelastic trapping/ de-trapping physics rather than elastic tunneling in conventional model of flicker noise. The proposed model is validated with measurement data of multiple technology nodes (16/14/12/7 nm) and different bias conditions. The results provide accurate flicker noise characteristics for variability-aware circuit design at nanoscale technology nodes.