InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with fMAX = 1.2 THz

We report a new InP/GaAsSb Double Heterostructure Bipolar Transistor (DHBT) emitter fin architecture with a record f
MAX
= 1.2 THz, a simultaneous f
T
= 475 GHz and BV
CEO
= 5.4 V. The resulting BV
CEO
x f
MAX
= 6.48 THz-V is unparalleled in semiconductor technology. The performance arises because the process allows: i) an optimal choice of baseemitter access distance down to 10 nm, ii) the use of thicker base contact metals, and iii) the minimization of parasitic capacitances and resistances via precise lateral wet etching of the B/C mesa. Perhaps more significantly, InP/GaAsSb DHBTs with f
MAX
> 1 THz are demonstrated with emitter lengths as long as 9.4 µm and areas as high as 1.645 µm
²
. Such an area is >6x larger than in previously reported THz DHBTs, representing a breakthrough in THz transistor scalability.