Toward High Performance 4H-SiC MOSFETs Using Low Temperature Annealing Process with Supercritical Fluid

An annealing process at 120°C with supercritical fluid (SCF) is proved to be highly efficient in improving the quality 4H-SiC/SiO
2
in MOSFET devices. The peak field-effect mobility of the fabricated lateral 4H-SiC MOSFET on (0001) Si face was improved to 72.3 cm
²
/V. s, which is about twice as much as the state-of-the-art results of post oxidation annealing process in the mostly used nitrogen-oxide atmosphere. The low temperature avoids the re-oxidation and material decomposing issues of high temperature. As a result, the reliability of the dielectric layer is significantly enhanced. What's inspiring is that the proposed efficient low temperature annealing process is compatible with the standard 4H-SiC MOSFET fabrication process.