Nox and Buried PN junctions effect on RF performance of High-Resistivity Silicon substrates

In this paper, a substrate interface passivation solution based on high-resistivity (HR) substrates buried PN junctions with aggressive pitch is presented. C-V measurements, small- and large-signal simulations and measurements are reported. The HR+PN solution presented achieves effective resistivity values reaching 2 kΩ.cm with 0.1 dB/mm loss at 6 GHz. We report that this PN-passivated substrate provides good linearity and has no bias-dependency in its large-signal performance. This solution is suitable for local Parasitic Surface Conduction (PSC) interface passivation for next generations of wireless communications.